https://doi.org/10.1140/epja/i2015-15015-2
Special Article - Tools for Experiment and Theory
Low-temperature technique of thin silicon ion implanted epitaxial detectors
1
Heavy Ion Laboratory, Warsaw University, Warsaw, Poland
2
LPC, IN2P3-CNRS, ENSICAEN, Université de Caen, F-14050, Caen-Cedex, France
3
“Horia Hulubei” National Institute of Physics and Nuclear Engineering (IFIN-HH), RO-077125, Bucharest Magurele, Romania
4
INFN and Università di Firenze, via G. Sansone 1, 50019, Sesto Fiorentino (Firenze), Italy
5
Institute of Experimental Physics, University of Warsaw, Warsaw, Poland
6
GANIL, CEA and IN2P3-CNRS, B.P. 5027, 14076, Caen-Cedex 05, France
7
Institut de Physique Nucléaire, IN2P3-CNRS, 91406, Orsay-Cedex, France
8
INFN and Dipartimento di Scienze Fisiche, Università di Napoli “Federico II”, Napoli, Italy
9
INFN and Università di Bologna, 40126, Bologna, Italy
10
LNS, INFN and Università di Catania, 95129, Catania, Italy
11
INFN LNL Legnaro, viale dell’Università 2, 35020, Legnaro (Padova), Italy
12
Jagiellonian University, Cracow, Poland
13
Silesian University, University of Silesia, Katowice, Poland
14
Institute of Electronic Materials Technology, Warsaw, Poland
15
Warsaw University of Technology, Faculty of Physics, Warsaw, Poland
16
Institute of Mikromechanics and Photonics, Department of Design of Precision Devices, Warsaw University of Technology, Faculty of Mechatronics, Warsaw, Poland
* e-mail: kord@slcj.uw.edu.pl
Received:
30
October
2014
Revised:
15
January
2015
Accepted:
26
January
2015
Published online:
9
February
2015
A new technique of large-area thin ion implanted silicon detectors has been developed within the R&D performed by the FAZIA Collaboration. The essence of the technique is the application of a low-temperature baking process instead of high-temperature annealing. This thermal treatment is performed after B+ ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from 241Am (〈E α 〉 = 5.5 MeV). Preliminary tests on the first thin detector (area ≈ 20 × 20 mm2) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction 84Kr (E = 35 A MeV) + 112Sn. The ΔE − E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2 A MeV depending on the ion charge.
© SIF, Springer-Verlag Berlin Heidelberg, 2015