Eur. Phys. J. A (2017) 53: 32
https://doi.org/10.1140/epja/i2017-12223-8

Regular Article - Experimental Physics

Pulse-height defect in single-crystal CVD diamond detectors

¹ Center for Nuclear Study, The University of Tokyo, Hirosawa 2-1, 351-0198, Wako, Saitama, Japan
² Flerov Laboratory of Nuclear Reactions, JINR, Dubna, Moscow Region, Russia
³ Manipal Centre for Natural Sciences, Manipal University, 576014, Manipal, Karnataka, India
⁴ Justus-Liebig-Universität Gießen, II. Physikalisches Institut, Heinrich-Buff-Ring 16, 35392, Gießen, Germany
⁵ GSI Helmholtzzentrum für Schwerionenforschung, 64291, Darmstadt, Germany
⁶ CEA, LIST, Diamond Sensor Laboratory, CEA/Saclay, 91191, Gif-sur-Yvette, France

^* e-mail: o.beliuskina@cns.s.u-tokyo.ac.jp

Received: 7 October 2016
Accepted: 2 February 2017
Published online: 22 February 2017

Abstract

The pulse-height versus deposited energy response of a single-crystal chemical vapor deposition (scCVD) diamond detector was measured for ions of Ti, Cu, Nb, Ag, Xe, Au, and of fission fragments of ²⁵² Cf at different energies. For the fission fragments, data were also measured at different electric field strengths of the detector. Heavy ions have a significant pulse-height defect in CVD diamond material, which increases with increasing energy of the ions. It also depends on the electrical field strength applied at the detector. The measured pulse-height defects were explained in the framework of recombination models. Calibration methods known from silicon detectors were modified and applied. A comparison with data for the pulse-height defect in silicon detectors was performed.