Eur. Phys. J. A (2024) 60: 235
https://doi.org/10.1140/epja/s10050-024-01454-9

Special Article - New Tools and Techniques

Investigation of very high radiation hardness of 21 $\mathit{\mu }$m silicon self-biased detectors

¹ Heavy Ion Laboratory, Warsaw University, L. Pasteura 5a, 02-093, Warsaw, Poland
² Sonictech, Mokra 3c, 05-092, Kiełpin, Poland
³ Institute of Microelectronics and Photonics, al. Lotników 32/46, 02-668, Warsaw, Poland

^a mpaluchferszt@slcj.uw.edu.pl

Received: 16 September 2024
Accepted: 12 November 2024
Published online: 27 November 2024

Abstract

The radiation damage of 21 $\mathrm{\mu }$m thick self-biased epitaxial $\Delta E$ detectors were tested as a function of fluence of 90 MeV $_{}^{14}$N ions. Technology of production and technique of measurements of $\Delta E$ detectors were described. A new technique of soldering contact to thin detector is shown. In the present work the 21 $\mathrm{\mu }$m thick self-biased detectors marked as d4 and d5 show proper operation with the fluence about 4$·$10$_{}^{15}$${\text{ions/cm}}^2$ and the fluence about 8$·$10$_{}^{15}$${\text{ions/cm}}^2$, respectively. The charge collection efficiency of thin d5 $\Delta E$ detector was increased about double at fluence about 8$·$10$_{}^{15}$${\text{ions/cm}}^2$. The charge collection efficiency of thin d4 $\Delta E$ detector was increased about 35$\%$ at fluence about 4$·$10$_{}^{15}$${\text{ions/cm}}^2$ followed decrease about 70$\%$ of detector counting rate registration from fluence 9.1$·$10$_{}^{15}$${\text{ions/cm}}^2$ to fluence about 5$·$10$_{}^{16}$${\text{ions/cm}}^2$ due to partially removing of Al evaporated contact from detector surface as an effect of heavy ion irradiation. Increase of charge collection efficiency of thin self-biased detectors manufactured by the low-temperature technique was probably produced by increasing of build-in potential as an effect of activate carrier concentration of boron ions in epitaxial layer by heavy ion irradiation.