EPJ

2024 Impact factor 2.8
EPJ A - Hadrons and Nuclei
Hadrons and Nuclei

EPJB Colloquium – From SiC to fluorescent SiC based white LEDs

Details
Published on 11 March 2014
alt
Three free standing 3C-SiC substrates with size 10x10 mm (Fig. 16).

A new EPJ B Colloquium reviews the latest advances in silicon carbide (SiC) for optoelectronics. The wide bandgap of SiC makes it a great semiconductor material to make devices for in high power, high frequency and high temperature applications.

During the past decade, SiC has also become a promising materials for light-emitting diodes (LED), since it was found that co-doping it with nitrogen and boron produces a high donor-acceptor pair emission efficiency. Fluorescent SiC based white LED light source is an innovative concept for optoelectronic devices.

In order to accomplish it, the development of growth and nanofabrication techniques is crucial. This Colloquium covers available and new growth methods for poly-crystalline fluorescent SiC source material, single crystalline epitaxial growth and nanofabrication of SiC to enhance the extraction efficiency for fluorescent SiC based white LEDs.

Advances in wide bandgap SiC for optoelectronics. Haiyan Ou, Yiyu Ou, Aikaterini Argyraki, Saskia Schimmel, Michl Kaiser, Peter Wellmann, Margareta K. Linnarsson, Valdas Jokubavicius, Jianwu Sun, Rickard Liljedahl, and Mikael Syväjärvi (2014) Eur.Phys. J. B, DOI: 10.1140/epjb/e2014-41100-0

All news
Editors-in-Chief
David Blaschke, Silvia Leoni and Dario Vretenar
Submit your Paper
Thank you very much; that was exceptionally fast, and excellent quality. We would like to thank you for your thorough work. We understand that our papers are often quite challenging to typeset and we appreciate your professionalism and efficiency.

Harald Griesshammer, The George Washington University, Washington DC, USA

More testimonials
ISSN (Electronic Edition): 1434-601X

© Società Italiana di Fisica and
Springer-Verlag

Conference announcements